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Semiconductor Electronics question

2009 · Q150
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Semiconductor Electronics question

2009 · Q150

NEETPhysicsSemiconductor ElectronicsMCQ+4 / −1
A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength
  1. A
    4000 nm
  2. B
    6000 nm
  3. C
    4000 A∘\mathop A\limits^ \circA∘​
  4. D
    6000 A∘\mathop A\limits^ \circA∘​
View written solutionFree

Correct answer: C

λ\lambda λmax = hcE{{hc} \over E}Ehc​

= 6.6×10−34×3×1082.5×1.6×10−19{{6.6 \times {{10}^{ - 34}} \times 3 \times {{10}^8}} \over {2.5 \times 1.6 \times {{10}^{ - 19}}}}2.5×1.6×10−196.6×10−34×3×108​

= 5000 Ao\mathop A\limits^o Ao​

Now the wavelength detected by photodiode be less than λ\lambda λmax, hence it can detect a signal of wave length 4000 Ao\mathop A\limits^o Ao​.

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