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Electronic Devices question

2023 · 1 Feb · Shift 1 · Q47
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Electronic Devices question

2023 · 1 Feb · Shift 1 · Q47

JEE MainPhysicsElectronic DevicesMCQ+4 / −1

Match List I with List II:

List I List II
A. Intrinsic semiconductor I. Fermi-level near the valence bond
B. n-type semiconductor II. Fermi-level in the middle of valence and conduction band.
C. p-type semiconductor III. Fermi-level near the conduction band
D. Metals IV. Fermi-level inside the conduction band

Choose the correct answer from the options given below :

  1. A
    A-III, B-I, C-II, D-IV
  2. B
    A-II, B-I, C-III, D-IV
  3. C
    A-I, B-II, C-III, D-IV
  4. D
    A-II, B-III, C-I, D-IV
View written solutionFree

Correct answer: D

  1. Recall the position of Fermi level for different materials:

    • Intrinsic semiconductor: Fermi level lies approximately midway between the valence band and conduction band.
    • n-type semiconductor: Due to donor impurities, the Fermi level shifts towards the conduction band.
    • p-type semiconductor: Due to acceptor impurities, the Fermi level shifts towards the valence band.
    • Metals: The Fermi level lies inside a partially filled conduction band.

  2. Now match List I with List II:

    • A. Intrinsic semiconductor →\rightarrow→ II. Fermi-level in the middle of valence and conduction band
    • B. n-type semiconductor →\rightarrow→ III. Fermi-level near the conduction band
    • C. p-type semiconductor →\rightarrow→ I. Fermi-level near the valence band
    • D. Metals →\rightarrow→ IV. Fermi-level inside the conduction band

  3. Thus the correct matching is:

    A−II,  B−III,  C−I,  D−IVA-II,\; B-III,\; C-I,\; D-IVA−II,B−III,C−I,D−IV

  4. Compare with the given options:

    This corresponds to Option D.

  5. Comparison with stored correct answer:

    Stored correct answer = D

    Derived answer = D

    Hence, they agree.

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