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Electronic Devices question

2021 · 22 Jul · Shift 2 · Q64
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Electronic Devices question

2021 · 22 Jul · Shift 2 · Q64

JEE MainPhysicsElectronic DevicesMCQ+4 / −1
Consider a situation in which reserve biased current of a particular P-N junction increases when it is exposed to a light of wavelength ≤\le≤ 621 nm. During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly.
  1. A
    1 eV
  2. B
    4 eV
  3. C
    0.5 eV
  4. D
    2 eV
View written solutionFree

Correct answer: D

  1. Physical idea

In a reverse-biased P ⁣−NP\!- NP−N junction, if light falls on the junction and the reverse current increases, it means photons are generating electron-hole pairs.

For this to happen, the photon energy must be at least equal to the band gap energy:

Ephoton≥EgE_{\text{photon}} \ge E_gEphoton​≥Eg​

Given that this happens for light of wavelength λ≤621 nm\lambda \le 621\,\text{nm}λ≤621nm, the threshold wavelength is approximately

λ0=621 nm\lambda_0 = 621\,\text{nm}λ0​=621nm

So,

Eg≈hcλ0E_g \approx \frac{hc}{\lambda_0}Eg​≈λ0​hc​

  1. Use the standard relation

For photon energy in electron-volts:

E(eV)=1240λ(nm)E(\text{eV}) = \frac{1240}{\lambda(\text{nm})}E(eV)=λ(nm)1240​

Thus,

Eg≈1240621 eVE_g \approx \frac{1240}{621} \text{ eV}Eg​≈6211240​ eV

  1. Calculate

Eg≈1.997 eV≈2 eVE_g \approx 1.997 \text{ eV} \approx 2 \text{ eV}Eg​≈1.997 eV≈2 eV

  1. Match with the options
  • A: 1 eV1\,\text{eV}1eV
  • B: 4 eV4\,\text{eV}4eV
  • C: 0.5 eV0.5\,\text{eV}0.5eV
  • D: 2 eV2\,\text{eV}2eV

Hence, the correct option is:

D  :  2 eV\boxed{D\;:\;2\,\text{eV}}D:2eV​

  1. Comparison with stored answer

Stored correct answer: DDD

My derived answer is also DDD, so they agree.

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