NEETPhysicsSemiconductor ElectronicsMCQ+4 / −1
Consider the following statements (A) and (B) and identify the correct answer.
(A) A Zener diode is connected in reverse bias, when used as a voltage regulator.
(B) The potential barrier of p-n junction lies between 0.1 V to 0.3 V.
(A) A Zener diode is connected in reverse bias, when used as a voltage regulator.
(B) The potential barrier of p-n junction lies between 0.1 V to 0.3 V.
- A(A) is incorrect but (B) is correct.
- B(A) and (B) both are correct.
- C(A) and (B) both are incorrect.
- D(A) is correct and (B) is incorrect.
View written solutionFree
Correct answer: D
In reverse biased, after breakdown, voltage across
the zener diode becomes constant. Therefore
zener diode is connected in reverse biased when
used as voltage regulator.
for Ge Potential barrier V0 = 0.3 V
Si Potential barrier V0 = 0.7 V
More from Semiconductor Electronics
- The electron concentration in an n-type semiconductor is the same as hole concentration in a p-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.2021 · MCQ
- For the given circuit, the input digital signals are applied at the terminals A, B and C. What would be the output at the terminal y? Includes diagram2021 · MCQ
- The increase in the width of the depletion region in a p-n junction diode is due to :2020 · MCQ
- For the logic circuit shown, the truth table is : Includes diagram2020 · MCQ
- For a p-type semiconductor, which of the following statements is true?2019 · MCQ
- The correct Boolean operation represented by the circuit diagram drawn is : Includes diagram2019 · MCQ
- In the combination of the following gates the output Y can be written in terms of inputs A and B as Includes diagram2018 · MCQ
- In a p-n junction diode, change in temperature due to heating2018 · MCQ