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Semiconductor Electronics question

2005 · Q147
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Semiconductor Electronics question

2005 · Q147

NEETPhysicsSemiconductor ElectronicsMCQ+4 / −1
Application of a forward bias to a p-n junction
  1. A
    widens the depletion zone
  2. B
    increases the potential difference across the depletion zone
  3. C
    increases the number of donors on the n side
  4. D
    decreases the electric field in the depletion zone.
View written solutionFree

Correct answer: D

Number of donors is more because electrons from –ve terminal of the cell pushes (enters) the n side and decreases the number of uncompensated pentavalent ion due to which potential barrier is reduced. The neutralised pentavalent atom are again in position to donate electrons.

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